Typical Replacing Infineon IGBT
High inversion efficiency
High output power density
IC in parallel blanced current
High strength insulation substrate
Automotive IGBT Module
IC in parallel blanced current
Sintering Cu foil for wire bonding
Replacing Infineon Econo/HP Series
Anti-vibration structure for high speed
IGBT Small Power Module-N Series
Collector-Emitter Voltage 1200V
Continuous Collector Current 10A
Repetitive Peak Collector Current 20A
Total Power Dissipation 105W
IGBT Medium Power Module-E65 Series
Collector-Emitter Voltage 1200V
Continuous Collector Current 35A
Repetitive Peak Collector Current 70A
Total Power Dissipation 208W
IGBT Medium Power Module-E63 Series
Collector-Emitter Voltage 1200V
Continuous Collector Current 25A
Repetitive Peak Collector Current 50A
Total Power Dissipation 158W
IGBT High Power Module-F45 Series
Collector-Emitter Voltage 1200V
Continuous Collector Current 200A
Peak Collector Current 400A
Total Power Dissipation 1360W
IGBT High Power Module-F23 Series
Collector-Emitter Voltage 1200V
Continuous Collector Current 40A
Peak Collector Current 80A
Total Power Dissipation 312W
Replacing Infineon SiC Power Module
Voltage 650V/750V/1200V
IC in parallel blanced current
High strength insulation substrate
Anti-vibration structure for high speed
SiC Power Module
High Power Density
Low Switching Loss
1200V/60A/Half-bridge
Fast Operation Frequency
Silicon Carbide SBD-650V
Temperature-Independent
High-Frequency Operation
Reverse Breakdown Voltage: 650V 1200V
Package type: TO220, TO247, TO252......
Silicon Carbide SBD-1200V
Temperature-Independent
High-Frequency Operation
Reverse Breakdown Voltage:1200V
Package type: TO220, TO247, TO252......
Silicon Carbide MOSFET
Higher frequency operation
Reduction in system cost
Longer lifetime and higher reliability
Highest efficiency for reduced cooling effort
Gallium Nitride Power Device
High-Speed Switching
High Breakdown Voltage
High Operating Temperature
Ultra Low Switching Loss
HST118SA GaAs Power Attenuator IC
Replace Avago IC AMMP-6640 Perfectly
Frequency Range：DC~40GHz
I.L.：5dB@40GHz
Attenuation：>20dB
IIP3：>25dBm
P1dB：>26dBm
HST122FA GaAs Power Amplifier IC
Freq:0.9~1.3GHz
Gain:20dB
Noise Figure:3.5dB
Output Power for 1dB Compression: 26dBm
Supply Voltage: +5V
Supply Current: 265mA
HST136S GaAs Power Attenuator IC
Freq: DC~18GHz
5dB LSB Steps to 35dB
RMS of Attenuation Accuracy: 1dB
Insertion Loss: 2dB
Control Voltage: 0/-5V
Homray Semiconductor Technology. All rights Reserved.
E-mail: cary@homray-semi.com ; anna@homray-semi.com