Gallium Nitride Power Device

As the leading manufacturer and supplier of GaN power device, Homray Semiconductor Technology provide 600V Gallium Nitide (GaN) power device.Power devices used in electrical energy conversion and control systems that consume tremendous amount of power during operations are especially regarded as the key devices to "save energy" It is therefore important to optimize the efficiency of these devices to minimize energy loss during their operation.

GaN has the potential to reduce energy loss of the power devices. "GaN (gallium nitride)", a compound of Ga (Gallium) and N (Nitrogen), possesses high breakdown voltage and low conduction resistance characteristics that enable high-speed switching and miniaturization. Unlike conventional Si transistors that require bigger chip area to reduce on-resistance, GaN devices having small sizes (i.e. low parasitic capacitance) allow high speed switching and miniaturization with ease.

Application


Power devices have two contributors of energy loss
"Conduction loss" that is due to the resistance in the device current loop.
"Switching loss" that occurs during the transition between "On" and "Off" states.

Specification