IGBT Power Module
Replacing Infineon IGBT
Small Power Module
Medium Power Module
High Power Module
SiC Power Device
SiC SBD
SiC MOSFET
SiC Power Module
GaN Power Device
GaN GaAs Power IC

Silicon Carbide MOSFET

Higher frequency operation
Reduction in system cost
Longer lifetime and higher reliability
Highest efficiency for reduced cooling effort

Product Description

As the leading manufacturer and supplier of Silicon Carbide (SiC) MOSFET,Homray Semiconductor Technology offer 650V & 1200V SiC MOSFET. The package type of SiC MOSFET are TO-247-3,TO-247-4,TO-263-7. The MOSFET technology which enables radically new product designs. In comparison to traditional Si based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. SiC MOSFET first products in 1200V target photovoltaic inverters, battery charging and energy storage. SiC MOSFET represents the best performance, reliability and ease of use for system designers to harness never before seen levels of efficiency and system flexibility.

Application

Specification

Package Type