IGBT Power Module
Replacing Infineon IGBT
Small Power Module
Medium Power Module
High Power Module
SiC Power Device
SiC SBD
SiC MOSFET
SiC Power Module
GaN Power Device
GaN GaAs Power IC

HST122FA GaAs Power Amplifier IC

Freq:0.9~1.3GHz
Gain:20dB
Noise Figure:3.5dB
Output Power for 1dB Compression: 26dBm
Supply Voltage: +5V
Supply Current: 265mA

Product Description

As the leading manufacturer and supplier of GaAs/GaN Power IC, Homray Semiconductor Technology can provide GaAs Power Amplifier IC, GaN Power IC etc. A power amplifier is an amplifier designed primarily to increase the power available to a load. In practice, amplifier power gain depends on the source and load impedances, as well as the inherent voltage and current gain. A radio frequency (RF) amplifier design typically optimizes impedances for power transfer, while audio and instrumentation amplifier designs normally optimize input and output impedance for least loading and highest signal integrity.

Applications
Base station
Defense communications
Electronic warfare (EW) and radar
Optical
Point-to-point radio
VSAT

Technial parameters reference as typical model HST122FA-1below: