Silicon Carbide SBD-650V

As the leading manufacturer and supplier of Schottky Barrier Diode (SBD), Homray Semiconductor Technology provide 650V and 1200V SiC SBD for PV Inverter, Server Power etc. The package type of 650V SiC SBD are TO-220C-2L,TO-220FM,TO-247-3L etc.

Schottky Barrier Diode (SBD)can acquire metal-semiconductor junction by contacting metal and semiconductor, instead of using the p-type semiconductor and the n-type semiconductor to make PN junction. Therefore, SBD also known as the metal-semiconductor diode (contact) or surface barrier diode, and it is a kind of heat carrier diode.The differences in material properties between Silicon Carbide and Silicon limit the fabrication of practical Silicon unipolar diodes (Schottky diodes) to a range up to 100V–150V, with relatively high on-state resistance and leakage current. In SiC material Schottky diodes can reach a much higher breakdown voltage.

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Product Features
Zero Reverse Recovery Current/ Zero Forward Recovery Voltage/ High-Frequency Operation/ Temperature-Independent Switching Behavior/ Extremely Fast Switching/ Positive Temperature Coefficient on VF/ Replace Bipolar with Unipolar Rectifiers/ Essentially No Switching Losses/ Higher Efficiency/ Reduction of Heat Sink Requirements/ Parallel Devices Without Thermal Runaway

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