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Home > Products > GaN GaAs Power IC > HST136S GaAs Power Attenuator IC

HST136S GaAs Power Attenuator IC

Freq: DC~18GHz
5dB LSB Steps to 35dB
RMS of Attenuation Accuracy: 1dB
Insertion Loss: 2dB
Control Voltage: 0/-5V

Product Description

As the leading manufacture and supplier of GaAs power IC GaN power IC, Homray Semiconductor Technology offer GaAs digital attenuators. The HST136S is a 3-bit GaAs pHEMT digital attenuator. Convering DC to 18GHz, the insertion loss is less than 2dB and the attenuator bit values are 5 dB, 10dB, 20dB for a total attenuator of 35dB. RMS of attenuation accuracy is excellent at 1dB. The attenuator operates using a negative control voltage of 0/-5V to select each attenuation state and requires no bias supply.


Application:

Cable TV (CATV)
Microwave radio
Wireless infrastructure
Defense and aerospace

Technial parameters reference as typical model HST136S below:
Electrical Specifications(TA=25℃)                                      Truth Table










Related Products

  • HST118SA GaAs Power Attenuator IC

  • HST122FA GaAs Power Amplifier IC

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Homray Semiconductor Technology. All rights Reserved.
E-mail: cary@homray-semi.com ; anna@homray-semi.com