HST118SA GaAs Power Attenuator IC

As the leading manufacturer and supplier of GaAs/GaN Power IC,Homray Semiconductor Technology provdie GaAs Power Amplifier IC, GaAs Power Attenuator IC etc. HST118SA-Q06 IC is a monolithic, voltage variable, GaAs Power Attenuator IC that operates DC-40 GHz and replacing Avago IC AMMP-6640 Perfectly. The attenuator has a distributed topology that helps to absorb parasitic effects of its series and shunt FETs to make it broadband.

Applications:
Microwave Radio Systems
Satellite VSAT, DBS Up/Down Link
LMDS & Pt-Pt mmW Long Haul
Broadband Wireless Access
WLL and MMDS loops

Typical Performance(TA=25℃, Zin=Zout=50Ω
Data was obtained from a 2.4mm connector based test fixture and includes connector and board mismatch and lossed. Losses may gradually increase from ~0.1dB at 45MHz to ~1.5dB at 40GHz at input and output ports.)


S11 VS Frenquency                                                                                                 S22 VS Frenquency


Insertion Loss VS Frequency                                                                            IIP3 VS Attenuation Input Power=0dBm


Attenuation VS Input Power(Frequency=6GHz)                                          Attenuation VS Input Power(Frequency=18GHz)


Attenuation VS Input Power(Frequency=26GHz)                                            Attenuation VS Input Power(Frequency=40GHz)


Minimum Attenuation VS Frequency(Over Temp）                                          Maximum Attenuation VS Frequency(Over Temp）


Minimum Attenuation VS P1 dB                            Mid (10dB) Attenuation VS P1dB               Maximum Attenuation VS P1dB


The HST118SA-Q06 IC is driven by voltage ramps placed on Vseries and Vshunt control pins. Operation in this mode requires voltages between 0 to 1.5 volts for Vse and 0 to 1.5 volts for Vsh. The recommended DC control voltage range is Vse=0 to 1.2 volts and Vsh= 0 to 1.2 volts. A simplified schematic for the HST118SA-Q06 is shown in below figure.