IGBT Medium Power Module-E65 Series

As the leading manufacturer and supplier of Silicon IGBT Power Module, Homray Semiconductor Technology medium power IGBT modules are designed for 600V/650V, 1200V and 1700V with rated current range 10A - 600A. HST-GL35P120E65 & HST-GL50P120E65 can replacing Infineon IGBT Power Module FP35R12KT4 and FP50R12KT4. The IGBT power module functions as a switch and can be used to switch electrical power on and off extremely fast and with high energy efficiency.The IGBT power module is becoming the preferred device for high power applications due to its ability to enhance switching, temperature, weight and cost performance.

Features
Low switching losses / Low vce(sat)with positive temperature coefficient / Including fast & soft recovery anti-parallel FWD / Low inductance case / High short circuit capability(10us) / Isolated heatsink using DBC technology

Applications
Motor Drivers
AC and DC servo drive amplifier
UPS (Uninterruptible Power Supplies)


Technial parameters reference as typical model HST-GL35P120E65 below:

Circuit Diagram ＆ Package Dimensions


IGBT Inverter
Absolute Maximum Ratings


Characteristic values




Diode Inverter
Absolute Maximum Ratings


Characteristic values