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Home > Products > SiC Power Device > SiC SBD > Silicon Carbide SBD-1200V

Silicon Carbide SBD-1200V

Temperature-Independent
High-Frequency Operation
Reverse Breakdown Voltage:1200V
Package type: TO220, TO247, TO252......

Product Description

As the leading manufacturer and supplier of silicon carbide schottky barrier diode(SBD), Homray Semiconductor Technology can provde 1200V SiC SBD.The advantages of silicon carbide SBD is improved circuit efficiency(low overall cost), low switching losses, ease of paralleling devices without thermal runaway, smaller heat sink requirements, low reverse recovery current, low device capacitance, and low reverse leakage current at operating temperature. The package type of 1200V SiC SBD are TO-220C-2L,TO-247-2L,TO252 etc.

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  SiC SBD Raw Material


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E-mail: cary@homray-semi.com ; anna@homray-semi.com