About US


Homray Semiconductor Technology(HST)was established in 2013, is a leading manufacturer and supplier of IGBT Power Module(Si), SiC Power Device(SiC SBD, SiC MOSFET), Full SiC Power Module(SiC SBD Module /SiC MOSFET Module), Hybrid SiC Power Module and GaN Power Device , GaN Power IC ,GaAs Power IC etc. SiC/GaN Power Device and SiC/GaN Power Module can achieve low switching losses and fast switching/oscillation simultaneously because of its high critical electrical field. Homray Semiconductor Technology is committed to manufacturing semiconductor device and module with high quality for modern energy efficient motor drives and industrial automation systems. Further application fields include PFC/Power Supplies, Intelligrid, UPS, Motor Control, Renewable (Wind/Tidal) Energies, PV Inverter, Tramcar, Welding Machine, and Electric Vehicles applications. As one of the biggest power semiconductor device module manufacturers in China, excellent products quality

Our Products

  • Typical Replacing Infineon IGBT

    High inversion efficiency
    High output power density
    IC in parallel blanced current
    High strength insulation substrate

  • IGBT Small Power Module-N Series

    Collector-Emitter Voltage 1200V
    Continuous Collector Current 10A
    Repetitive Peak Collector Current 20A
    Total Power Dissipation 105W

  • IGBT Medium Power Module-E63 Series

    Collector-Emitter Voltage 1200V
    Continuous Collector Current 25A
    Repetitive Peak Collector Current 50A
    Total Power Dissipation 158W

  • Silicon Carbide SBD-650V

    Temperature-Independent
    High-Frequency Operation
    Reverse Breakdown Voltage: 650V 1200V
    Package type: TO220, TO247, TO252......