Homray Semiconductor Technology(HST)was established in 2013, is a leading manufacturer and supplier of IGBT Power Module(Si), SiC Power Device(SiC SBD, SiC MOSFET), Full SiC Power Module(SiC SBD Module /SiC MOSFET Module), Hybrid SiC Power Module and GaN Power Device , GaN Power IC ,GaAs Power IC etc. SiC/GaN Power Device and SiC/GaN Power Module can achieve low switching losses and fast switching/oscillation simultaneously because of its high critical electrical field. Homray Semiconductor Technology is committed to manufacturing semiconductor device and module with high quality for modern energy efficient motor drives and industrial automation systems. Further application fields include PFC/Power Supplies, Intelligrid, UPS, Motor Control, Renewable (Wind/Tidal) Energies, PV Inverter, Tramcar, Welding Machine, and Electric Vehicles applications. As one of the biggest power semiconductor device module manufacturers in China, excellent products quality
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Typical Replacing Infineon IGBT
High inversion efficiency
High output power density
IC in parallel blanced current
High strength insulation substrate -
IGBT Small Power Module-N Series
Collector-Emitter Voltage 1200V
Continuous Collector Current 10A
Repetitive Peak Collector Current 20A
Total Power Dissipation 105W
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IGBT Medium Power Module-E63 Series
Collector-Emitter Voltage 1200V
Continuous Collector Current 25A
Repetitive Peak Collector Current 50A
Total Power Dissipation 158W -
Silicon Carbide SBD-650V
Temperature-Independent
High-Frequency Operation
Reverse Breakdown Voltage: 650V 1200V
Package type: TO220, TO247, TO252......